| PART |
Description |
Maker |
| NTLJD3182FZ NTLJD3182FZTAG NTLJD3182FZTBG |
Power MOSFET and Schottky Diode −20 V, −4.0 A, μCool Single P−Channel & Schottky Barrier Diode, ESD
Power MOSFET and Schottky Diode −20 V, −4.0 A, 楼矛Cool垄芒 Single P−Channel & Schottky Barrier Diode, ESD
|
ON Semiconductor
|
| KDR367E |
Schottky Barrier Diode
SCHOTTKY BARRIER TYPE DIODE(LOW VOLTAGE HIGH SPEED SWITCHING)
|
Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
|
| 1PS79SB10115 |
Schottky barrier single diode
|
NXP Semiconductors
|
| KDR105S |
Schottky Barrier Diode
SCHOTTKY BARRIER TYPE DIODE(HIGH FREQUENCY RECTIFICATION)
|
Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
|
| FMB-2306 |
30A Schottky barrier diode in TO220F package
Schottky Barrier Diode - 60V
|
Sanken Electric Co.,Ltd.
SANKEN[Sanken electric]
|
| NSR1020MW2T3G NSR1020MW2T1G |
Schottky Barrier Diode(肖特基势垒二极管) 1 A, 30 V, SILICON, SIGNAL DIODE
Schottky Barrier Diodes
|
ONSEMI[ON Semiconductor]
|
| SBJ1820 SBJ1830 SBJ1845 SBJ1840 |
Schottky Barrier Rectifier Diodes - Single Diode
|
Diotec Semiconductor
|
| SBQ1030 SBQ1040 SBQ1020 SBQ1045 |
Schottky Barrier Rectifier Diodes ?Single Diode
|
Diotec Semiconductor
|
| BAT760 BAT76013 |
Medium power Schottky barrier single diode
|
NXP Semiconductors
|
